Electron impact ionization cross-section of C2, C3, Si2, Si3, SiC, SiC2 and Si2C
dc.contributor.author | Naghma, Rahla | |
dc.contributor.author | Antony, Bobby | |
dc.date.accessioned | 2018-06-21T05:23:58Z | |
dc.date.available | 2018-06-21T05:23:58Z | |
dc.date.issued | 2013 | |
dc.identifier.citation | Molecular Physics, 2013,V.111(No.2),P.269-275 | en_US |
dc.identifier.other | http://dx.doi.org/10.1080/00268976.2012.718807 | |
dc.identifier.uri | http://hdl.handle.net/123456789/1300 | |
dc.language.iso | en | en_US |
dc.publisher | Taylor & Francis | en_US |
dc.subject | Ionization cross-section | en_US |
dc.subject | Complex spherical optical potential | en_US |
dc.subject | Complex scattering potential-ionization contribution | en_US |
dc.subject | SCIE | en_US |
dc.title | Electron impact ionization cross-section of C2, C3, Si2, Si3, SiC, SiC2 and Si2C | en_US |
dc.type | Article | en_US |