Frequency dependent negative capacitance effect and dielectric properties of swift heavy ion irradiated Ni/oxide/n-GaAs Schottky diode
dc.contributor.author | Bobby, A...[ et al.] | |
dc.date.accessioned | 2018-06-22T06:06:26Z | |
dc.date.available | 2018-06-22T06:06:26Z | |
dc.date.issued | 2016 | |
dc.identifier.citation | Physica B,2016,V.489, P.23-27 | en_US |
dc.identifier.other | http://dx.doi.org/10.1016/j.physb.2016.02.022 | |
dc.identifier.uri | http://hdl.handle.net/123456789/1322 | |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | Schottky diodes | en_US |
dc.subject | Semiconductors | en_US |
dc.subject | Thin films | en_US |
dc.subject | Vapor deposition | en_US |
dc.subject | Dielectric properties | en_US |
dc.subject | SCIE | en_US |
dc.title | Frequency dependent negative capacitance effect and dielectric properties of swift heavy ion irradiated Ni/oxide/n-GaAs Schottky diode | en_US |
dc.type | Article | en_US |