Fabrication and performance of transition metal oxide thin-film based spintronic memory devices

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dc.contributor.authorM, Malaidurai
dc.date.accessioned2022-10-11T06:22:16Z
dc.date.available2022-10-11T06:22:16Z
dc.date.issued2022-08
dc.identifier.urihttp://hdl.handle.net/123456789/2419
dc.language.isoenen_US
dc.publisherIndian Institute of Technology (Indian School of Mines) Dhanbaden_US
dc.subjectMagnetic tunnel junctions (MTJs)en_US
dc.subjectmagneto-optical Kerr effect (MOKE)en_US
dc.subjectSpintronicsen_US
dc.subjectHematite nanocrystalsen_US
dc.subjectPh.Den_US
dc.subjectAPHen_US
dc.subjectPH2129en_US
dc.titleFabrication and performance of transition metal oxide thin-film based spintronic memory devicesen_US
dc.typeThesisen_US
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