Interface state density and dielectric properties of Au/n-GaP Schottky diode

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dc.contributor.authorShiwakoti, Nagendra
dc.contributor.authorBobby, Achamma
dc.contributor.authorAntony, Bobby
dc.date.accessioned2018-06-22T04:35:30Z
dc.date.available2018-06-22T04:35:30Z
dc.date.issued2016
dc.identifier.citationJournal of Vacuum Science & Technology B,2016,V.34(No.5),P.051206-1-6en_US
dc.identifier.otherhttp://dx.doi.org/10.1116/1.4961907
dc.identifier.urihttp://hdl.handle.net/123456789/1318
dc.language.isoenen_US
dc.publisherAmerican Vacuum Societyen_US
dc.subjectAu/n- GaP Schottky diodeen_US
dc.subjectDielectric constanten_US
dc.subjectDielectric lossen_US
dc.subjectSchottky Barrier Diodes (SBDs)en_US
dc.subjectSCIEen_US
dc.titleInterface state density and dielectric properties of Au/n-GaP Schottky diodeen_US
dc.typeArticleen_US
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