Analog and RF performance of nanoscale FETs with emerging channel materials

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Date
2019-12
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Indian Institute of Technology (Indian School of Mines), Dhanbad
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Keywords
Nanoscale MOSFETs, Carbon nanotube, NEGF formalism, Tunnel FET, Ph.D, PH1486, ECE
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http://hdl.handle.net/123456789/1673
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Jitendra Kumar