Transport properties of Gallium Phosphide based Schottky contact with thin insulating layer

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dc.contributor.authorShiwakoti, N...[ et al.]
dc.date.accessioned2018-06-22T11:01:23Z
dc.date.available2018-06-22T11:01:23Z
dc.date.issued2017
dc.identifier.citationMaterials Science in Semiconductor Processing,2017,V.61,P.145–149en_US
dc.identifier.otherhttp://dx.doi.org/10.1016/j.mssp.2017.01.009
dc.identifier.urihttp://hdl.handle.net/123456789/1328
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectAu/GaP Schottky contactsen_US
dc.subjectTransport propertiesen_US
dc.subjectBarrier inhomogeneityen_US
dc.subjectConduction mechanismsen_US
dc.subjectSCIEen_US
dc.titleTransport properties of Gallium Phosphide based Schottky contact with thin insulating layeren_US
dc.typeArticleen_US
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