Modelling and simulation of novel material based FET for next generation electronics

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dc.contributor.authorSingh, Niraj Kumar
dc.date.accessioned2024-02-01T04:57:55Z
dc.date.available2024-02-01T04:57:55Z
dc.date.issued2023-12
dc.identifier.urihttp://hdl.handle.net/123456789/2989
dc.language.isoenen_US
dc.publisherIndian Institute of Technology(Indian School of Mines)Dhanbaden_US
dc.subjecttunneling field effect transistoren_US
dc.subjectMOSFETen_US
dc.subject2-D TMD TFETen_US
dc.subjectPh.Den_US
dc.subjectECEen_US
dc.subjectPH2670en_US
dc.titleModelling and simulation of novel material based FET for next generation electronicsen_US
dc.typeThesisen_US
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