Barrier modification of Au/n-GaAs Schottky structure by organic interlayer
dc.contributor.author | Bobby, A...[ et al.] | |
dc.date.accessioned | 2018-06-22T06:18:47Z | |
dc.date.available | 2018-06-22T06:18:47Z | |
dc.date.issued | 2016 | |
dc.identifier.citation | Indian Journal Of Physics,2016, V.90(No.3),P.307-312 | en_US |
dc.identifier.other | DOI 10.1007/s12648-015-0764-y | |
dc.identifier.uri | http://hdl.handle.net/123456789/1323 | |
dc.language.iso | en | en_US |
dc.publisher | Indian Association for the Cultivation of Science | en_US |
dc.subject | Au/n-GaAs | en_US |
dc.subject | Schottky contacts | en_US |
dc.subject | Interface modification | en_US |
dc.subject | Organic interlayer | en_US |
dc.subject | SCIE | en_US |
dc.title | Barrier modification of Au/n-GaAs Schottky structure by organic interlayer | en_US |
dc.type | Article | en_US |