Bobby, A...[ et al.]2018-06-212018-06-212015Current Applied Physics,2015,V.15,P.1500-1505http://dx.doi.org/10.1016/j.cap.2015.08.020http://hdl.handle.net/123456789/1307enSchottkyElectronic energy lossDefectsTrapsRecombination centersCapacitanceSCIESwift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diodeArticle