Bobby, A...[ et al.]2018-06-202018-06-202013Physica B,2013,V.431,P.6-10http://dx.doi.org/10.1016/j.physb.2013.08.037http://hdl.handle.net/123456789/1295enHg–nSi SchottkycontactsInterfacial conduction mechanismInhomogeneitySCIEPhase transition induced double-Gaussian barrier height distribution in Schottky diodeArticle