The role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode

Shiwakoti, N...[ et al.]2018-06-222018-06-222017Microelectronics Reliability,2017,V.69,P.40–46http://dx.doi.org/10.1016/j.microrel.2016.12.005http://hdl.handle.net/123456789/1330enGallium PhosphideSchottky contactsSHI irradiationDielectric propertiesSpace charge polarizationElectronic energy lossNegative capacitanceSCIEThe role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diodeArticle