Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2 Schottky diodes

Bobby, A.Gupta, P. S.Antony, B. K.2018-06-202018-06-202012European Physical Journal-Applied Physics,2012,V.60,P.10104-1-5DOI: 10.1051/epjap/2012120343http://hdl.handle.net/123456789/1286enSchottky diodesAl-pWSe2Reverse I-V characteristicsSCIEEffect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2 Schottky diodesArticle