Effect of Au8+ irradiation on Ni/n-GaP Schottky diode: Its influence on interface state density and relaxation time

Shiwakoti, N...[ et al.]2018-06-222018-06-222017Physica B,2017,V.504,P.133–138http://dx.doi.org/10.1016/j.physb.2016.10.010http://hdl.handle.net/123456789/1331enGallium phosphideSchottky diodesIon irradiationDielectric propertiesNegative capacitanceSCIEEffect of Au8+ irradiation on Ni/n-GaP Schottky diode: Its influence on interface state density and relaxation timeArticle