Shiwakoti, N...[ et al.]2018-06-222018-06-222017Materials Science in Semiconductor Processing,2017,V.61,P.145–149http://dx.doi.org/10.1016/j.mssp.2017.01.009http://hdl.handle.net/123456789/1328enAu/GaP Schottky contactsTransport propertiesBarrier inhomogeneityConduction mechanismsSCIETransport properties of Gallium Phosphide based Schottky contact with thin insulating layerArticle