Shiwakoti, N...[ et al.]2018-06-222018-06-222016Materials Science in Semiconductor Processing,2016,V.42,P.378–382http://dx.doi.org/10.1016/j.mssp.2015.11.010http://hdl.handle.net/123456789/1326enNi/GaP Schottky contactsCapacitance–voltageConductance–voltageDielectric propertiesMetal–semiconductor interfaceSCIETemperature dependent dielectric studies of Ni/n-GaP Schottky diodes by capacitance and conductance measurementsArticle