Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode
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Date
2015
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Description
Keywords
Schottky, Electronic energy loss, Defects, Traps, Recombination centers, Capacitance, SCIE
Citation
Current Applied Physics,2015,V.15,P.1500-1505