Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode

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dc.contributor.authorBobby, A...[ et al.]
dc.date.accessioned2018-06-21T09:28:30Z
dc.date.available2018-06-21T09:28:30Z
dc.date.issued2015
dc.identifier.citationCurrent Applied Physics,2015,V.15,P.1500-1505en_US
dc.identifier.otherhttp://dx.doi.org/10.1016/j.cap.2015.08.020
dc.identifier.urihttp://hdl.handle.net/123456789/1307
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectSchottkyen_US
dc.subjectElectronic energy lossen_US
dc.subjectDefectsen_US
dc.subjectTrapsen_US
dc.subjectRecombination centersen_US
dc.subjectCapacitanceen_US
dc.subjectSCIEen_US
dc.titleSwift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diodeen_US
dc.typeArticleen_US
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