Phase transition induced double-Gaussian barrier height distribution in Schottky diode
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Date
2013
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Description
Keywords
Hg–nSi Schottkycontacts, Interfacial conduction mechanism, Inhomogeneity, SCIE
Citation
Physica B,2013,V.431,P.6-10