Phase transition induced double-Gaussian barrier height distribution in Schottky diode

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dc.contributor.authorBobby, A...[ et al.]
dc.date.accessioned2018-06-20T11:25:12Z
dc.date.available2018-06-20T11:25:12Z
dc.date.issued2013
dc.identifier.citationPhysica B,2013,V.431,P.6-10en_US
dc.identifier.otherhttp://dx.doi.org/10.1016/j.physb.2013.08.037
dc.identifier.urihttp://hdl.handle.net/123456789/1295
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectHg–nSi Schottkycontactsen_US
dc.subjectInterfacial conduction mechanismen_US
dc.subjectInhomogeneityen_US
dc.subjectSCIEen_US
dc.titlePhase transition induced double-Gaussian barrier height distribution in Schottky diodeen_US
dc.typeArticleen_US
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