The role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode

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dc.contributor.authorShiwakoti, N...[ et al.]
dc.date.accessioned2018-06-22T11:44:45Z
dc.date.available2018-06-22T11:44:45Z
dc.date.issued2017
dc.identifier.citationMicroelectronics Reliability,2017,V.69,P.40–46en_US
dc.identifier.otherhttp://dx.doi.org/10.1016/j.microrel.2016.12.005
dc.identifier.urihttp://hdl.handle.net/123456789/1330
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectGallium Phosphideen_US
dc.subjectSchottky contactsen_US
dc.subjectSHI irradiationen_US
dc.subjectDielectric propertiesen_US
dc.subjectSpace charge polarizationen_US
dc.subjectElectronic energy lossen_US
dc.subjectNegative capacitanceen_US
dc.subjectSCIEen_US
dc.titleThe role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diodeen_US
dc.typeArticleen_US
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