Performance analysis of double gate tunnel fet for surface orientation doping fluctuation and heavy ion irradiation

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PH2467.pdf (27.35 MB)
Date
2023-04
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Indian Institute of Technology (Indian School of Mines) Dhanbad
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Keywords
random dopant fluctuation (RDF), Heavy-ion irradiation, DG-TFET, Ph.D, ECE, PH2467
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http://hdl.handle.net/123456789/2774
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Jitendra Kumar