Performance analysis of double gate tunnel fet for surface orientation doping fluctuation and heavy ion irradiation

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dc.contributor.authorMaurya, Ashish
dc.date.accessioned2023-05-01T04:48:48Z
dc.date.available2023-05-01T04:48:48Z
dc.date.issued2023-04
dc.identifier.urihttp://hdl.handle.net/123456789/2774
dc.language.isoenen_US
dc.publisherIndian Institute of Technology (Indian School of Mines) Dhanbaden_US
dc.subjectrandom dopant fluctuation (RDF)en_US
dc.subjectHeavy-ion irradiationen_US
dc.subjectDG-TFETen_US
dc.subjectPh.Den_US
dc.subjectECEen_US
dc.subjectPH2467en_US
dc.titlePerformance analysis of double gate tunnel fet for surface orientation doping fluctuation and heavy ion irradiationen_US
dc.typeThesisen_US
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