Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2 Schottky diodes
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Date
2012
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
EDP Sciences
Abstract
Description
Keywords
Schottky diodes, Al-pWSe2, Reverse I-V characteristics, SCIE
Citation
European Physical Journal-Applied Physics,2012,V.60,P.10104-1-5