Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2 Schottky diodes

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dc.contributor.authorBobby, A.
dc.contributor.authorGupta, P. S.
dc.contributor.authorAntony, B. K.
dc.date.accessioned2018-06-20T06:44:14Z
dc.date.available2018-06-20T06:44:14Z
dc.date.issued2012
dc.identifier.citationEuropean Physical Journal-Applied Physics,2012,V.60,P.10104-1-5en_US
dc.identifier.otherDOI: 10.1051/epjap/2012120343
dc.identifier.urihttp://hdl.handle.net/123456789/1286
dc.language.isoenen_US
dc.publisherEDP Sciencesen_US
dc.subjectSchottky diodesen_US
dc.subjectAl-pWSe2en_US
dc.subjectReverse I-V characteristicsen_US
dc.subjectSCIEen_US
dc.titleEffect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2 Schottky diodesen_US
dc.typeArticleen_US
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