Effect of Au8+ irradiation on Ni/n-GaP Schottky diode: Its influence on interface state density and relaxation time
Loading...
Date
2017
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Description
Keywords
Gallium phosphide, Schottky diodes, Ion irradiation, Dielectric properties, Negative capacitance, SCIE
Citation
Physica B,2017,V.504,P.133–138