Effect of Au8+ irradiation on Ni/n-GaP Schottky diode: Its influence on interface state density and relaxation time

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dc.contributor.authorShiwakoti, N...[ et al.]
dc.date.accessioned2018-06-22T12:12:05Z
dc.date.available2018-06-22T12:12:05Z
dc.date.issued2017
dc.identifier.citationPhysica B,2017,V.504,P.133–138en_US
dc.identifier.otherhttp://dx.doi.org/10.1016/j.physb.2016.10.010
dc.identifier.urihttp://hdl.handle.net/123456789/1331
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectGallium phosphideen_US
dc.subjectSchottky diodesen_US
dc.subjectIon irradiationen_US
dc.subjectDielectric propertiesen_US
dc.subjectNegative capacitanceen_US
dc.subjectSCIEen_US
dc.titleEffect of Au8+ irradiation on Ni/n-GaP Schottky diode: Its influence on interface state density and relaxation timeen_US
dc.typeArticleen_US
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