Temperature dependent dielectric studies of Ni/n-GaP Schottky diodes by capacitance and conductance measurements

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MSSP-42-2016.pdf (776.95 KB)
Date
2016
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Publisher
Elsevier
Abstract
Description
Keywords
Ni/GaP Schottky contacts, Capacitance–voltage, Conductance–voltage, Dielectric properties, Metal–semiconductor interface, SCIE
Citation
Materials Science in Semiconductor Processing,2016,V.42,P.378–382
URI
http://hdl.handle.net/123456789/1326
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Bobby Antony