Temperature dependent dielectric studies of Ni/n-GaP Schottky diodes by capacitance and conductance measurements

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dc.contributor.authorShiwakoti, N...[ et al.]
dc.date.accessioned2018-06-22T09:59:14Z
dc.date.available2018-06-22T09:59:14Z
dc.date.issued2016
dc.identifier.citationMaterials Science in Semiconductor Processing,2016,V.42,P.378–382en_US
dc.identifier.otherhttp://dx.doi.org/10.1016/j.mssp.2015.11.010
dc.identifier.urihttp://hdl.handle.net/123456789/1326
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectNi/GaP Schottky contactsen_US
dc.subjectCapacitance–voltageen_US
dc.subjectConductance–voltageen_US
dc.subjectDielectric propertiesen_US
dc.subjectMetal–semiconductor interfaceen_US
dc.subjectSCIEen_US
dc.titleTemperature dependent dielectric studies of Ni/n-GaP Schottky diodes by capacitance and conductance measurementsen_US
dc.typeArticleen_US
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