Reverse leakage mechanisms of liquid metal contacts onto II–VI group semiconductor (Ga/p-WSe2)

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dc.contributor.authorBobby, Achamma
dc.contributor.authorGupta, Partha Sarathi
dc.contributor.authorAntony, Bobby Kachappilly
dc.date.accessioned2018-06-21T06:23:26Z
dc.date.available2018-06-21T06:23:26Z
dc.date.issued2013
dc.identifier.citationEuropean Physical Journal-Applied Physics,2013,V.62,P.20104-1-5en_US
dc.identifier.otherDOI: 10.1051/epjap/2013130018
dc.identifier.urihttp://hdl.handle.net/123456789/1303
dc.language.isoenen_US
dc.publisherEDP Sciencesen_US
dc.subjectSchottky diodesen_US
dc.subjectCurrent-voltage methoden_US
dc.subjectSemiconductor (Ga/p-WSe2)en_US
dc.subjectCurrent-voltage methoden_US
dc.subjectSCIEen_US
dc.titleReverse leakage mechanisms of liquid metal contacts onto II–VI group semiconductor (Ga/p-WSe2)en_US
dc.typeArticleen_US
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